original mos fet transistor

Place of Origin:Original

...Transistor Type pHEMT FET Frequency 12GHz Gain 13.7dB Voltage - Test 2V Current Rating 15mA Noise Figure 0.5dB Current - Test 10mA Power - Output 125mW Voltage - Rated 4V Package / Case 4-Micro-X Supplier Device Package 4-Micro-X Shipment UPS/EMS/DHL/FedEx Express. Condtion New original...

Place of Origin:Original and New

Brand Name:CJ/Changdian original

Model Number:CJ2304 SOT-23

Integrated Circuits IC Original and New,CJ2304 SOT-23 N-channel MOS Field Effect Transistor CJ/Changdian Original [Who we are?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is a leading distributor of electronic components, including ...

Brand Name:Diodes

Model Number:DMT6009LSS-13

Place of Origin:CHINA

...Transistors FETS MOSFET N-CH 60V 10.8A 8SO T&R 2 Discrete Semiconductor DMT6009LSS-13 Specification : Part number DMT6009LSS-13 Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series - Package Tape & Reel (TR) Part Status Active FET...

Brand Name:NEXPERIA

Model Number:BUK78150-55A/CUX

Place of Origin:NEXPERIA

...MOS Standard N Channel Trench BUK78150-55A/CUX MOSFET N-channel TrenchMOS standard level FET『MOSFET N-CH 55V 5.5A SOT223』 Manufacturer: Nexperia Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-223-3 Transistor...

Brand Name:NEXPERIA

Model Number:BUK78150-55A/CUX

Place of Origin:NEXPERIA

...MOS Standard N Channel Trench BUK78150-55A/CUX MOSFET N-channel TrenchMOS standard level FET『MOSFET N-CH 55V 5.5A SOT223』 Manufacturer: Nexperia Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-223-3 Transistor...

Brand Name:RKENS

Model Number:RS-909A

Place of Origin:China

Manufacturers Supply Triode Forming Machine MOS Transistor Bending 90 Degrees Machine Intro: RS-909A is a full automatic and fast speed transistor lead forming machine. It can automatic feed transistor, detect back and front side. Forming tool can be ...

Brand Name:Nexperia

Model Number:BUK9M15-60E

Place of Origin:China

... FETs, MOSFETs Mfr Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id)

Brand Name:Nexperia

Model Number:BUK7S0R7-40H

Place of Origin:China

... Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Mfr Nexperia USA Inc. Series Automotive, AEC-Q101 Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss...

Brand Name:Nexperia

Model Number:BUK6D43-40P

Place of Origin:China

... Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Mfr Nexperia USA Inc. Series Automotive, AEC-Q101 Package Tape & Reel (TR) Product Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss...

Brand Name:Infineon Technologies

Model Number:AUIRFS4010TRL

Place of Origin:China

... Technologies Series HEXFET® Package Tape & Reel (TR) Product Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ ...

Brand Name:Nexperia

Model Number:BUK9612-55B

Place of Origin:China

... FETs, MOSFETs Mfr Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55 V Current - Continuous Drain (Id)

Brand Name:original

Model Number:LP2301BLT1G

Original New MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G Products Description: 1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers 2.the material of product compliance withRoHS requirements and Halogen Free 3.S- prefix for ...

Brand Name:TOSHIBA

Model Number:TK39A60W,S4VX

Place of Origin:Original

TOSHIBA TK39A60W Power Switching Transistor 38.8A 600V 50W 4100pF Silicon N-Channel MOS Applications Switching Voltage Regulators Description Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS...

Brand Name:INFINEON

Model Number:SAK-TC1797-512F180EF AC

Place of Origin:Original Brand

TC1797-512F180EF AC Integrated circuit Chip NPN Transistor MOS diode original Electronic BGA Components SAK-TC1797-512F1 We Just offer NEW & ORIGINAL items , should any of these items be of interest to you, please let us know. we are pleased to quote you ...

Brand Name:Original

Model Number:LP3407LT1G

... Body Model: > 4000 V− Machine Model: > 400 V 3. Moisture Sensitivity Level: 1 4. MOS (Field Effect Transistor) / LP3407LT1G Diodes and Rectifiers P channel 30V 4.1A Customer Service: 1. Do you support BOM lists? Of course, we have a professional team to

Brand Name:INFINEON

Model Number:IRFB5620PBF

IRFB5620PBF TO-220 N-channel FET 200V 25A MOS Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IRFB5620PBF is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic products, we ...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the