original mos fet transistor

Model Number:irfb4110PBF

Place of Origin:Guangdong, China

Brand Name:original

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Model Number:IRF640PBF

Place of Origin:Guangdong, China

Brand Name:original

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Model Number:IRF1405pbf

Place of Origin:Guangdong, China

Brand Name:original

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Place of Origin:Guangdong, China

Brand Name:original

Model Number:TIP147

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Model Number:2SK2225-E

Place of Origin:Guangdong, China

Brand Name:original

MOSFET N-CH 1500V 2A IC Chip TO-3P 2SK2225-80-E-T2 2SK2225 Products Description: 1. Silicon N Channel MOS FET Silicon N Channel MOS FET, through hole N Channel 2A (Ta) 50W (Tc) TO 3PFM 2.Trans MOSFET N-CH Si 1.5kV 2A 3-PIN (3+Tab) TO 3PFM Tube 3.Suitable...

Brand Name:Canyi

Model Number:FQPF2N60C

Place of Origin:Guangdong, China

...transistor TO-220F MOS FET N-Channel transistor Original Package Features: 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capabilit General Description: These N-Channel enhancement mode power field effect transistors...

Brand Name:ST brand

Model Number:STB270N4F3 STB270N TO-263-3

Place of Origin:Japan

Brand new MOS FET STB270N4F3 STB270N TO-263-3 mosfet Model number/ Part number STB270N4F3 STB270N Package TO-263- 3 Original condition Original 100% Brand name ST Stock Yes! In stock!! Bulk!! Contact me now Whatsapp/ Skype/ Number 86- 15102073750 - Product...

Brand Name:ST brand

Model Number:STB270N4F3 STB270N TO-263-3

Place of Origin:Japan

Brand new MOS FET STB270N4F3 STB270N TO-263-3 mosfet Model number/ Part number STB270N4F3 STB270N Package TO-263- 3 Original condition Original 100% Brand name ST Stock Yes! In stock!! Bulk!! Contact me now Whatsapp/ Skype/ Number 86- 15102073750 - Product...

Place of Origin:Taiwan

Brand Name:Motorola, Inc

Model Number:MRF136

Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ...

Brand Name:CANYI

Model Number:SI2301

Place of Origin:Guangdong, China

SI2301 MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features: Advanced trench process technology High Density Cell Design For ...

Brand Name:TOSHIBA

Model Number:TLP250

Place of Origin:Original

...TRANSISTOR INVERTER INVERTERS tv circuit boards led driver circuit board Transistor Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET...

Model Number:P40T15GU

Place of Origin:Guangdong, China

Brand Name:Original

...Original NCEP40T15G P40T15GU Field Effect Tube MOS DFN5X6-8L 40V-150A Available Now! Looking for a reliable MOSFET for your electronic projects? Look no further than our shop! We offer the original NCEP40T15G P40T15GU Field Effect Tube MOS DFN5X6-8L 40V-150A at the lowest price in the market, without compromising on quality. Our P40T15GU MOS FET...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp...

Brand Name:Original Factory

Model Number:NTMFS4C05NT1G

Place of Origin:CN

... at 25°C - 11.9A continuous drain (Ta). Specification Of NTMFS4C05NT1G FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF134

Quick Detail: MRF134 - Motorola, Inc - N-CHANNEL MOS BROADBAND RF POWER FET Description: ….designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF136

MRF136 is a N-CHANNEL MOS BROADBAND RF POWER FETs. Part NO: MRF136 Brand: FSL Date Code: 120+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Brand Name:Alpha Omega Semiconductor Inc

Model Number:AO3402

... or other general applications. Basic data ​1. product model:AO3402 2. Product features:Switching power supply protection 3. wrap:SOT23-3 4. FET type: Single N-Channel MOS 5

Brand Name:Julun

Model Number:PG-TO 252/PG-TO 251

Place of Origin:CHINA

IPD70R1K4CE, IPS70R1K4CE FET 700V CoolMOS CE Power Transistor MOS tube Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/...

Brand Name:Original Factory

Model Number:TW015N120C,S1F

Place of Origin:CN

Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V​ Product Description Of TW015N120C,S1F TW015N120C,S1F is Silicon Carbide N-Channel MOS Transistors, suitable for use in Switching Voltage Regulators. Specification Of ...