transistor characteristics

Brand Name:Hua Xuan Yang

Model Number:12N60

Place of Origin:ShenZhen China

...Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = ...

Brand Name:TOS

Model Number:2SK3569

Place of Origin:Japan

...Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Electrical Characteristics (Ta = 25°C) Characteristics...

Brand Name:Infineon Technologies IR

Model Number:IRFS3207ZTRRPBF

... MOSFET MOSFT 75V 170A 4.1mOhm 120nC App Characteristics Features High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and ...

Brand Name:FUJI

Model Number:6DI30A-120

Place of Origin:JAPAN

6DI30A-120 NPN PNP Transistors 30A, 1200V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR Electrical Characteristics Collector Current-Max (IC) 30A Collector-emitter Voltage-Max 1200V Configuration COMPLEX DC Current Gain-...

Brand Name:KEC

Model Number:KTD1047

Place of Origin:Korean

KTD1047 NPN Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base ...

Brand Name:JOPTEC

Place of Origin:HEFEI, CHINA

...SMD type packages for transistor device Applications: automatic control of machinery and electrical appliances in the fields of home appliances, automobiles, ships, motor cars, power electronics, etc. Product characteristics: The external dimensions meet...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF557

...Motorola, Inc - RF LOW POWER TRANSISTOR NPN SILICON Description: Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Applications: • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain...

Model Number:BC548B

Place of Origin:original factory

... Vdc Emitter-Base Voltage VEBO 6 6 6 Vdc Collector Current Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Total Device Dissipation Alumina Substrate, TA = 25℃ BC546 BC547 BC548 PD 625 ...

Brand Name:FUJI

Model Number:FMH23N50E

Place of Origin:Original

Fuji N-Channel FMH23N50E Silicon Power Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features Maintains both low power loss and low noise Lower RDS(on) characteristic Mor...

Brand Name:BT

Model Number:BT-850B-10000A

Place of Origin:China

..., multi-and multi-series combined electric tool battery, twist car battery (1 die spot welding 6 set) Product characteristics: 1,The name of spot welding die model is input in Chinese and English, and

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

...Transistor A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. Source-Drain Ratings and Characteristics...

Brand Name:Original Factory

Model Number:TW045N120C,S1F

Place of Origin:CN

...-Source Voltage: - 10 V, + 25 V Vgs(Th) (Max) @ Id: 5V @ 1mA Id - Continuous Drain Current: 20 A Characteristics Curves​

Brand Name:Coolmay

Model Number:L02M32T

Place of Origin:China

... series PLC has the following characteristics: 1. Strong scalability, 30 modules can be expanded, and the maximum I/O can reach 512 points. 2. It can be specially encrypted, and the password is set to 12345678 to completely ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...equipped with new lateral variable doping technology that enables it to achieve excellent characteristics in high-temperature environments. Furthermore, its special Power MOS structure provides it with superior ability to dissipate heat, as well as low on

Brand Name:Original

Model Number:IPG20N06S2L-35

Place of Origin:Original

IPG20N06S2L-35 MOSFET IPG2N6S2L35XT SP000613718 IPG20N06S2L35ATMA1 2 N Channel TCAN1042HGVDRQ1 TJA1027T/20 Semiconductor Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics...

Brand Name:AWT

Model Number:PD-6000A

Place of Origin:China

... 32650 Transistor precision spot welding machine 6000A 10000A Transistor precision spot welding machine 6000A 10000A PD series transistor spot welding technology is a high-end welding power source in the current market. It has the characteristics of fast ...

Brand Name:Original

Model Number:BC846

...; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise specified) Data Type BJT Series NPN Vceo 65V Ic 100mA Pd 200mW Part

Brand Name:STMicroelectronics

Model Number:STP110N8F6

Place of Origin:Shenzhen, China

...Transistors MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP110N8F6 Description: Transistors...