static random access memory

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-053 RS WT:C

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount Product Description Of MT53E1G32D2NP-053 RS WT:C MT53E1G32D2NP-053 RS WT:C is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. These memory...

Place of Origin:PHILIPPINE

Brand Name:SPANSION

Model Number:S29GL512P12TFIV20

...Memory featuring 90 nm MirrorBit Process Technology Description: The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access...

Brand Name:Original Factory

Model Number:MT25QL02GCBB8E12-0AAT

Place of Origin:CN

...application, saves instruction overhead, and reduces random access time. Specification Of MT25QL02GCBB8E12-0AAT Part Number MT25QL02GCBB8E12-0AAT Memory Size: 2 Gbit Interface Type: SPI Maximum Clock Frequency: 133 MHz Organisation: 256 M x 8 Features Of

Brand Name:Original Factory

Model Number:MT41K512M16VRN-107 IT:P

Place of Origin:CN

... dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. MT41K512M16VRN-107 IT:P Although each die is tested individually within the dual-die package, some ...

Brand Name:CYPRESS

Model Number:FM25V10-GTR

Place of Origin:original

... Circuit IC Chip is a non-volatile ferroelectric random access memory (F-RAM) device. It features a unique combination of high performance, low power consumption and high endurance, making it an ideal choice for ...

Model Number:FM24W256-G

Brand Name:Original

Place of Origin:US

...memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories...

Brand Name:Infineon / CYPRESS

Model Number:CY7C1061G30-10ZSXI

Place of Origin:original

... Parallel Write Cycle Time - Word, Page 10ns Access Time 10 ns Voltage - Supply 2.2V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface ...

Brand Name:Infineon / CYPRESS

Model Number:CY7C1021DV33-10ZSXI

Place of Origin:original

...-10ZSXI Flash Memory Chips 44-TSOP Package 1Mbit Static RAM Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mbit Memory Organization 64K x 16 Memory Interface Parallel Write Cycle Time - Word, Page 10ns Access Time 10 ...

Brand Name:Infineon / CYPRESS

Model Number:CY7C109D-10VXI

Place of Origin:original

...Flash Memory Chips 32-BSOJ Package High Performance CMOS Static RAM Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mbit Memory Organization 128K x 8 Memory Interface Parallel Write Cycle Time - Word, Page 10ns Access ...

Brand Name:Original Factory

Model Number:S70KS1282GABHA023

Place of Origin:CN

Memory IC Chip S70KS1282GABHA023 200MHz Pseudo SRAM Memory IC 24-FBGA​ Product Description Of S70KS1282GABHA023 S70KS1282GABHA023 The DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as pseudo static RAM (PSRAM). Specification Of S70KS1282GABHA023 Part Number S70KS1282GABHA023 Density 128 MBit Family KS-2 Initial Access Time 35 ns Memory

Model Number:MOC3052

Place of Origin:original factory

...Random Phase Optoisolators Triac Drivers The MOC3051 Series consists of a GaAs infrared LED optically coupled to a non–Zero–crossing silicon bilateral AC switch (triac). The MOC3051 Series isolates low voltage logic from 115 and 240 Vac lines to provide random phase control of high current triacs or thyristors. The MOC3051 Series features greatly enhanced static...

Brand Name:Micron Technology Inc.

Model Number:MT41K128M8DA-107:J

Place of Origin:original

... of 1.8V to 3.6V • Dual power supply of 1.7V to 1.95V for core and I/O • 1.8V I/O support • Power-down and deep power-down modes • Fast random read access •

Brand Name:GigaDevice Semiconductor (HK) Limited

Model Number:GD25LQ64CSIG

Place of Origin:Multi-origin

Product Listing: GD25LQ64CSIG Flash Memory Chips Features: • 8Mb of dual-voltage Flash memory • Operating voltage: 1.8V - 3V • Page size: 256 bytes • Random read access time: 70ns • High speed programming • Low power consumption • Single power supply ...