memory block

Brand Name:Macronix

Model Number:MX30LF4G18AC-TI

Place of Origin:original

...Memory Chip High Performance Storage Solution MX30LF4G18AC-TI Flash Memory Chips Product Description: The MX30LF4G18AC-TI Flash Memory Chips from Macronix are ideal for a variety of applications that require high-speed, reliable and low-power operation. This chip features advanced features such as 4K byte uniform block...

Brand Name:Macronix

Model Number:MX29GL512FLXFI-10Q

Place of Origin:original

... • Access Time: 70ns • Flash Read and Program: 2.0V - 3.6V • Flash Block Erase: 2.7V - 3.6V • Supports x8 and x16 Bus Widths • Multi-Level Cell (MLC) and Single Level Cell (...

Brand Name:Macronix

Model Number:MX25L12835FM2I-10G

Place of Origin:original

...Memory Chips for High Performance Applications Product Listing: MX25L12835FM2I-10G Flash Memory Chips Features: - 128Mb Flash Memory - Quad SPI Interface - 3V Supply Voltage - 2.7V to 3.6V Read/Write Voltage - 10MHz Clock Frequency - 80MHz Read Frequency - 40MHz Write Frequency - Uniform 4KB Sectors - Sector Erase with 4K/32K/64K/Block...

Brand Name:Infineon Technologies

Model Number:S29GL032N90TFI040

Place of Origin:original

...Memory Chip Storage and High-Speed Data Transfer Product Listing: S29GL032N90TFI040 Flash Memory Chips Features: - 32-megabit (4Mb x 8) NOR Flash Memory - Standard S29GL032N90TFI040 Package - Fast access times: 90ns - Data retention: 20 years - Endurance: 10,000 Program/Erase cycles - Erase operations: Sector, Block...

Brand Name:Winbond Electronics

Model Number:W25Q20EWBYIG

Place of Origin:original

...Memory Chips - Fast Reliable Storage for Your Electronics Needs Product Title: Winbond W25Q20EWBYIG TR Flash Memory Chips Product Description: Winbond W25Q20EWBYIG TR Flash Memory Chips are a reliable and cost-effective way to store data. These chips are built for high-speed, high-performance, and low-power applications. They feature a 4KB parameter sector, 8KB parameter block...

Brand Name:Original Factory

Model Number:MT25QL128ABA8E12-0AAT

Place of Origin:CN

... and page read from all blocks of the array. Specification Of MT25QL128ABA8E12-0AAT Part Number: MT25QL128ABA8E12-0AAT Erase Performance: 400KB/sec Program Performance: 2MB/sec ...

Brand Name:Original Factory

Model Number:MT29F2G08ABAEAWP-AATX:E

Place of Origin:CN

...Memory IC​ Product Description Of MT29F2G08ABAEAWP-AATX:E MT29F2G08ABAEAWP-AATX:E is 2Gbit Parallel Automotive NAND Flash Memory Chip, package is 48-TSOP. Specification Of MT29F2G08ABAEAWP-AATX:E Part Number: MT29F2G08ABAEAWP-AATX:E Operating Temperature: -40°C ~ 105°C (TA) Technology: FLASH - NAND Block Size: 64 Pages (128K + 4K Bytes) Memory...

Brand Name:Original Factory

Model Number:MT29F4G08ABAFAH4-AAT:F

Place of Origin:CN

... is 63-VFBGA (9mmx11mm). Specification Of MT29F4G08ABAFAH4-AAT:F Part Number: MT29F4G08ABAFAH4-AAT:F Operating Voltage Range – VCC: 2.7V–3.6V Memory Size: 4Gbit Mounting Style: SMD/SMT Organization: 512 M X 8 Erase Block: 700µs (TYP) Features Of

Brand Name:Original Factory

Model Number:MT29F4G08ABAFAH4-IT:F

Place of Origin:CN

... a cost-effective solution for applications requiring highdensity solid-state storage. Specification Of MT29F4G08ABAFAH4-IT:F Part Number: MT29F4G08ABAFAH4-IT:F Memory Interface: Parallel Random read: 25µs Page program: 300µs (TYP) Erase Block: 2ms (TYP)

Brand Name:Original Factory

Model Number:MT28EW256ABA1LPC-0SIT

Place of Origin:CN

...Memory IC MT28EW256ABA1LPC-0SIT Integrated Circuit Chip 64-LBGA​ Product Description Of MT28EW256ABA1LPC-0SIT MT28EW256ABA1LPC-0SIT is an asynchronous, uniform block, parallel NOR Flash memory device. READ, ERASE, and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode. Specification Of MT28EW256ABA1LPC-0SIT Part Number: MT28EW256ABA1LPC-0SIT Memory

Brand Name:Original Factory

Model Number:MT28EW128ABA1HJS-0SIT

Place of Origin:CN

...Memory IC 56-TFSOP Package Product Description Of MT28EW128ABA1HJS-0SIT MT28EW128ABA1HJS-0SIT can be used to check periodically the data integrity of a large block of data against a stored CRC reference over the life of the product. Specification Of MT28EW128ABA1HJS-0SIT Part Number MT28EW128ABA1HJS-0SIT Memory Organization 16M x 8, 8M x 16 Memory...

Brand Name:Original Factory

Model Number:MT25QL512ABB8E12-0SIT

Place of Origin:CN

... Program Performance: 2MB/sec Address Modes: 3-byte Protocols: Extended, Dual And Quad I/O Buffer Program: 512-word Block Erase:

Brand Name:Original Factory

Model Number:MT29F8T08EWLEEM5-R:E

Place of Origin:CN

...Memory IC MT29F8T08EWLEEM5-R:E Integrated Circuit Chip Product Description Of MT29F8T08EWLEEM5-R:E MT29F8T08EWLEEM5-R:E's READ, PROGRAM, and ERASE commands can be aborted while the device is in the busy state. The contents of the memory location being programmed or the block being erased are no longer valid. Specification Of MT29F8T08EWLEEM5-R:E Part Number MT29F8T08EWLEEM5-R:E Memory...

Brand Name:Original Factory

Model Number:IS22TF32G-JQLA1

Place of Origin:CN

...Memory Chip 200MHz Integrated Circuit Chip​ Product Description Of IS22TF32G-JQLA1 IS22TF32G-JQLA1 The controller directly manages the NAND flash, implementing functions like bad block management, error handling (ECC), static and dynamic wear-leveling, IOPS optimization and read sensing. Specification Of IS22TF32G-JQLA1 Part Number IS22TF32G-JQLA1 Technology FLASH - NAND (TLC) Memory Size 256Gbit Memory

Brand Name:WINBOND

Model Number:W25Q80DVSSIG

Place of Origin:TAIWAN

...Memory Chip 3V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI FEATURES Family of SpiFlash Memories – W25Q80DV: 8M-bit/1M-byte (1,048,576) – 256-byte per programmable page – Standard SPI: CLK,/CS,DI,DO,/WP,/Hold – Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold – Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3 – Uniform 4KB Sectors, 32KB & 64KB Blocks...

Brand Name:Microchip

Model Number:24LC64-I/P

Place of Origin:Malaysia

... Memory Chip EEPROM Memory IC 64Kb (8K x 8) I²C 400kHz 900ns 8-PDIP Features • Single supply with operation down to 1.8V • Low power CMOS technology - 1 mA active current typical - 1 µA standby current (max.) (I-temp) • Organized as 8 blocks of 8K...

Brand Name:Original Factory

Model Number:TC58NVG1S3HBAI6

Place of Origin:CN

...Memory IC Chip Single 3.3V 2Gbit NAND Electrically Erasable And Programmable Read-Only Memory Product Description Of TC58NVG1S3HBAI6 The TC58NVG1S3HBAI6 is a single 3.3 V 2 Gbit (2,281,701,376bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) Bytes  64 pages  2048 blocks...

Brand Name:ST

Model Number:M29W040B90K1

Quick Detail: 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory Specifications: part no. M29W040B90K1　 Manufacturer 　ST supply ability 600　 datecode 04+ package PLCC　 remark new and original stock ...

Brand Name:INTEL

Model Number:PA28F200B5B80

Quick Detail: SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Specifications: part no. PA28F200B5B80　 Manufacturer 　INTEL supply ability 　500 datecode 　2004+ package 　SSOP remark new and ...