650v to 247 igbt

Model Number:KGM50N65AI

...650V Silicon Power IGBT designed for demanding applications. It features low VCE(sat), fast switching, high ruggedness, and short-circuit rating, making it ideal for solar inverters, uninterrupted power supplies, industrial inductive heating, and energy storage systems. Product Attributes Brand: KIA Model: 50N65AI Package: TO-247 Technology: Silicon Power IGBT...

Place of Origin:CN

Brand Name:Original Factory

Model Number:FF300R07ME4

Automotive IGBT Modules FF300R07ME4 650V 300A Dual IGBT Module With TRENCHSTOP IGBT4 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Brand Name:STMicroelectronics

Model Number:STGW35HF60WD

Place of Origin:China

High-Performance STGW35HF60WD 600V 35A 200W TO-247 IGBT Transistor Product Description: The STGW35HF60WD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as ...

Brand Name:MAGNACHIP

Model Number:MBQ60T65PES

Place of Origin:KOREA

Brand Name:onsemi

Model Number:FGHL75T65MQDTL4

...packed with fully rated current diode. The FGHL75T65MQDTx IGBTs operate at 175°C maximum junction temperature, 650V collector to emitter voltage, and 75A collector current. These IGBTs feature positive temperature co-efficient for easy parallel operation,

Brand Name:STMicroelectronics

Model Number:STGWA60H65DFB

Place of Origin:Shenzhen, China

...Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube General Description : These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which ...

Place of Origin:Original

...IGBT Type - Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 160A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic - Power - Max - Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature - Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247

Brand Name:Intel

Model Number:5M160ZE64I5N

Place of Origin:original

...IGBT Switching with High Efficiency Reliability Product Listing: IGBT Power Module, 5M160ZE64I5N • Nominal Voltage: 650V • Maximum Current: 160A • Maximum Power Dissipation: 750W • Operating Temperature: -40°C to 125°C • Mounting Style: Through Hole • Package Type: TO-247...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVHL095N65S3F

... the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a

Brand Name:Infineon Technologies

Model Number:FF400R07KE4

Place of Origin:HUNGARY

FF400R07KE4 IGBT Modules IGBT Module 400A 650V 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-Series module with trench/fieldstop IGBT4 and Emitter Controlled Diode VCES = 650V IC nom = 400A / ICRM = 800A Typische ...

Brand Name:Original Factory

Model Number:IPW65R075CFD7AXKSA1

Place of Origin:China

650V 75mR Electronic Components IC Chip Integrated Circuit TO-247-3 IPW65R075CFD7AXKSA1 Product Description IPW65R075CFD7AXKSA1 have excellent hard commutation robustness, enabling usage in resonant topologies. IPW65R075CFD7AXKSA1 devices deliver ...

Model Number:GA35XCP12-247

... to the data sheet, such as PDF files Docx documents, etc. We have GA35XCP12-247 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Brand Name:IXYS

Model Number:IXGH40N60C2D1

Place of Origin:USA

IXGH40N60C2D1 # 75A 600V 300W DIP TO-247 HiPer FASTTM IGBTs w/ Diode Mosfet IGBT C2-Class High Speed IGBTs Features Very High Frequency IGBT Square RBSOA High Current Handling Capability Applications Uninterruptible Power Supplies (UPS) Switch-Mode and ...

Brand Name:SEMICONDUCTOR

Model Number:A70QS175-4

Place of Origin:Malaysia

A70QS175-4 SEMICONDUCTOR PROTECTION FUSES 700V AC 175A , 650V DC ratin A70Q Amp-trap® Semiconductor Protection fuses were developed for inverter applications requiring extremely low I2t. A70Q fuses provide the most responsive protection for applications...

Brand Name:Infineon

Model Number:FP150R07N3E4_B11

High-Power IGBT Module Boost Your Electronics Project with the FP150R07N3E4_B11 The FP150R07N3E4_B11 is a high-power IGBT module that is perfect for boosting your electronics project. With a powerful output of 150A and 650V, this IGBT module can handle ...

Brand Name:Microchip

Model Number:APT25GT120BRG

Place of Origin:USA

Discrete Semiconductors APT25GT120BRG TO-247-3 IGBT Transistors Product Description: The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ...

Brand Name:Infineon Technologies

Model Number:IKW75N60TXK

Place of Origin:Philippines

...IGBT by Infineon Technologies IGBT in TRENCHSTOP™ and Fieldstop technology with soft fast recovery anti-parallel Emitter Controlled HE diode Applications: Frequency Converters Uninterrupted Power Supply More Similar IGBT part number for General Semiconductor: PART NUMBER MFG PACKAGE IKW75N60T INFINEON TO-247 IKW75N60H3 INFINEON TO-247 IKW75N65EL5 INFINEON TO-247...

Brand Name:INFINEON

Model Number:IPW65R080CFDA

INFINEON Chip IPW65R080CFDA MOSFET N-CH 650V 43.3A TO247-3 Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds...

Place of Origin:Malaysia

Model Number:SPW47N60C3

Quick Detail: Cool MOS Power Transistor Description: • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances Applications: ...

Brand Name:MACMIC

Model Number:MMG200Q120B6TC

Place of Origin:China

NCE6050A 60V 50A SiC MOSFET Low Rds(on) 18mΩ Fast Switching High Frequency High Efficiency Robust Performance TO-247 Package For Server SMPS & Motor Drives Features VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V High density cell design for ultra low Rdson Fully...