IMBG120R350M1HXTMA1 IGBT Transistor Module N Channel 1200 V 4.7A 65W Surface Mount
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IMBG120R350M1HXTMA1 N-Channel 1200 V 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12 Infineon Technologies 1200V CoolSiC™ Modules Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and ......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Automotive IGBT Modules FS50R12W2T7P IGBT Modules 1200V IGBT Transistors Modules
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Automotive IGBT Modules FS50R12W2T7P IGBT Modules 1200V IGBT Transistors Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Siemens 6SY7000-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V
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... S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules Description IC FLASH 64GBIT......
Shenzhen Wisdomlong Technology CO.,LTD
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Industrial Eupec High Power IGBT Module FS150R12KE3 IGBT Transistors Module
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...IGBT Transistors Module FS150R12KE3 or FS15OR12KE3 FS150R12KE3 Product Description Brand: Eupec Model: FS150R12KE3 Alternate Model: FS15OR12KE3 Control way: unidirectional Pole number: two pole Package Material :Metal Package Package Outline: Flat Shape Shutdown speed: ordinary Cooling function: heat sink Description: EconoPACK ™ 3 1200V sixpack IGBT module......
Guangzhou Sande Electric Co.,Ltd.
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IPB044N15N5 IGBT Power Module 3.4M Ohms Resistance N Channel
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... Similar Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id -...
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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FF450R12KT4 IGBT power transistor module 450A 1200V High Voltage Igbt Power Supply Module IGBT Modules N-CH 1.2KV 580A
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... module designed to meet the demanding requirements of modern electronic systems. With its advanced features and reliable performance, this module offers exceptional power handling capabilities and efficient operation. Features 1:High Power Handling: The...
Shenzhen Retechip Electronics Co., Ltd
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ET439 P-Channel Enhancement Mode Field Effect Transistor FUJITSU IGBT Power Module
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...power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power conditioning, frequency conversion equipment,...
Mega Source Elec.Limited
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Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ......
Shenzhen ATFU Electronics Technology ltd
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KUG75H12W4L1 IGBT Module Insulated Gate Bipolar Transistor Module For Power Electronics
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...speed switching capability of a power transistor with the efficiency of a MOSFET. This module features an Insulated Gate Bipolar Transistor (IGBT) element, which allows for efficient power control and management in a wide range of applications. Designed to...
Krunter Future Tech (Dongguan) Co., Ltd.
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IRG4PC40UDPBF IGBT Power Module High Quality High Efficiency Low Loss Operation
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...IGBT Power Module High Quality High Efficiency Low Loss Operation IRG4PC40UDPBF IGBT Power Module The IRG4PC40UDPBF IGBT power module from Infineon is a high voltage (HV) insulated gate bipolar transistor (IGBT) module. It is designed for high power applications, including motor control, welding, lighting and renewable energy systems. The module......
Shenzhen Sai Collie Technology Co., Ltd.
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