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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | FCMT299N60 |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1-3 days |
| Packaging Details: | standard |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 299mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 51 nC @ 10 V |
ET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 299mOhm @ 6A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1948 pF @ 380 V | |
FET Feature | - | |
Power Dissipation (Max) | 125W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | Power88 | |
Package / Case |
Product Listing:
FCMT299N60
Manufacturer: ON Semiconductor
Type: MOSFET
Power Electronics: Yes
VDSS: 600V
ID: 30A
RDS(on): 0.085Ω
Package/Case: TO-247-3
Configuration: Single
Polarity: N-Channel
Operating Temperature: -55°C to 175°C (TJ)
PD: 170W
Number of Elements: Single
Max. Gate Source Voltage: ±20V
Max. Drain Source Voltage: 600V
Max. Drain Current: 30A
Max. Drain Source On-State Resistance: 0.085Ω
Minimum Gate Threshold Voltage: 2.2V
Maximum Gate Threshold Voltage: 4.0V
Power Dissipation: 170W
Mounting Type: Through Hole
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