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K4T1G164QF-BCE700 1Gbit DDR2 SDRAM Memory

Categories Memory IC Chip
Brand Name: Samsung Electronics
Model Number: K4T1G1640E-HIE6
Certification: ROHS
Place of Origin: TSOP
MOQ: 1pcs
Price: Negotiated
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 1000pcs
Delivery Time: 3-15days
Packaging Details: Tray/REEL
Stock: 8000
Manufacturer Product Number: K4T1G1640E-HIE6
Memory Type: DDR3 SDRAM
Memory Size: 1Gbit (128MB)
Memory Speed: 1600MHz
Supply Voltage: 1.5V
Package Type: 96-ball FBGA
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K4T1G164QF-BCE700 1Gbit DDR2 SDRAM Memory

K4T1G1640E-HIE6 - 1Gbit DDR3 SDRAM Memory


Find information here in stock.xlsx

Introduction:

The K4T1G1640E-HIE6 is a 1Gbit DDR3 SDRAM memory module designed for use in a variety of computing and memory-intensive applications. It features a high level of performance, reliability, and compatibility, making it an ideal solution for demanding memory applications. The K4T1G1640E-HIE6 also provides a high-speed data transfer rate and low power consumption, making it suitable for use in mobile devices and other power-sensitive applications.


Applications:

Desktop Computers, Laptops, Servers, Workstations


Product Attributes:

BrandSamsung Electronics
Memory TypeDDR3 SDRAM
Memory Size1Gbit (128MB)
Memory Speed1600MHz
Supply Voltage1.5V
Package Type96-ball FBGA

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FAQ:

Q1: What is the memory type of the K4T1G1640E-HIE6?

A: The K4T1G1640E-HIE6 is a DDR3 SDRAM memory module.

Q2: What is the memory speed of the K4T1G1640E-HIE6?

A: The K4T1G1640E-HIE6 has a memory speed of 1600MHz.

Q3: What is the supply voltage of the K4T1G1640E-HIE6?

A: The K4T1G1640E-HIE6 operates on a supply voltage of 1.5V.

Q4: What is the memory capacity of the K4T1G1640E-HIE6?

A: The K4T1G1640E-HIE6 has a memory capacity of 1Gbit (128MB).

Q5: What is the package type of the K4T1G1640E-HIE6?

A: The K4T1G1640E-HIE6 comes in a 96-ball FBGA package.

Q6: What kind of devices is the K4T1G1640E-HIE6 suitable for?

A: The K4T1G1640E-HIE6 is suitable for use in desktop computers, laptops, servers, and workstations requiring high performance and reliability for memory-intensive applications.

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