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| Categories | Silicon Carbide Wafer |
|---|---|
| Brand Name: | ZMKJ |
| Model Number: | 10x10x0.5mmt |
| Place of Origin: | CHINA |
| MOQ: | 5pcs |
| Price: | by case |
| Payment Terms: | T/T, Western Union, MoneyGram |
| Supply Ability: | 1-50pcs/month |
| Delivery Time: | 2-3weeks |
| Packaging Details: | single wafer package in 100-grade cleaning room |
| Material: | SiC single crystal 4H-N type |
| Grade: | Dummy /Production / Research grade |
| Thicnkss: | 0.5MM |
| Suraface: | polished |
| Application: | bearing test |
| Diameter: | 10x10x0.5mmt |
| color: | Tea green |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity
4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic)
substrates wafersS/ Customzied as-cut sic wafers SiC windows/lens/glasses
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | no = 2.61 | no = 2.60 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K | |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
High purity 4inch diameter Silicon Carbide (SiC) Substrate
Specification
4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots |
2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
About ZMKJ Company
ZMKJ can provides high quality single crystal SiC wafer ( Silicon
Carbide ) to electronic and optoelectronic industry . SiC wafer is
a next generation semiconductor material , with unique electrical
properties and excellent thermal properties , compared to silicon
wafer and GaAs wafer , SiC wafer is more suitable for high
temperature and high power device application . SiC wafer can be
supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type ,
Nitrogen doped , and semi-insulating type available . Please
contact us for more product information .
Our Relation Products
Sapphire wafer＆ lens/ LiTaO3 Crystal/ SiC wafers/ LaAlO3 /
SrTiO3/wafers/ Ruby Ball
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Double Side Polish Silicon Carbide Wafer 2-6'' 4H N - Doped SiC Wafers
6Inch Dia153mm 0.5mm monocrystalline SiC Silicon Carbide crystal seed Wafer or ingot
Transparent Un-Doped 4H-SEMI Hardness 9.0 Sic Lens
Customized SIC Silicon Carbide Wafer Single Crystal Window Piece 60 X 10 X 0.5mm
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer
Customized Sic Wafer SiC Single Crystal 4H-N Type Double Side Polished Surface
SIC Silicon Carbide Wafer 4H - N Type For MOS Device 8inch Dia200mm
350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
4H-N HPSI 100um Silicon Carbide Abrasive Powder For SIC Crystal Growth
