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MRF151G RF N Channel Transistor Broadband Replacement For BLF278

Categories Mosfet Power Transistor
Brand Name: MA-COM
Model Number: MRF151G
Certification: IEC
Place of Origin: USA
MOQ: 1 piece
Price: negotiable
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 10000 pieces per year
Delivery Time: 1-2 working days
Packaging Details: factory standard packing
Drain Source Voltage: 125Vdc
Drain Gate Voltage: 125Vdc
Gate Source Voltage: ±40Vdc
Drain Current: 40Adc
Power Dissipation: 500W
feature: high Efficiency
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MRF151G RF N Channel Transistor Broadband Replacement For BLF278

MRF151G RF Power Field-Effect Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278


Features

1, Guaranteed Performance at 175 MHz, 50 V

2, Output Power — 300 W • Gain — 14 dB (16 dB Typ)

3, Efficiency — 50% • Low Thermal Resistance — 0.35°C/W

4, Ruggedness Tested at Rated Output Power

5, Nitride Passivated Die for Enhanced Reliability


Description and Applications


Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.



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