rf transistor amplifier design

Place of Origin:Freescale Semiconductor

Brand Name:Motorola

Model Number:MHW903

Quick Detail: MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, ...

Brand Name:Mitsubishi Electric Semiconductor

Model Number:2SC1971

Place of Origin:CHINA

2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND ...

Place of Origin:Microsemi Power Products Group

Brand Name:MOT

Model Number:MRF581

...RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.. Low Noise - 2.5 dB @ 500 MHZ High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Applications: Designed for high current, low power, low noise, amplifiers...

Place of Origin:Freescale Semiconductor

Brand Name:MOT

Model Number:MRF9120

... gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment. Applications: • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF15060S

...broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB amplifier applications in 26 volt amplitude modulated and multi–carrier base station equipment. • Guaranteed Two–Tone Performance at

Place of Origin:Freescale Semiconductor

Brand Name:Motorola

Model Number:MHW807-1

Quick Detail: MHW807-1 - Motorola, Inc - UHF POWER AMPLIFIERS Description: Designed specifically for mobile cellular radio applications. The MHW807 Series amplifiers are capable of wide power range control, operate from a 12 volt supply and require onl...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF571

Quick Detail: MRF571 - Motorola, Inc - NPN Silicon High-Frequency Transistors Description: Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small...

Place of Origin:PHILIPPINE

Brand Name:FREESCALE

Model Number:MRF6S9045NR1

...RF Power Field Effect Transistors Description: Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier...

Place of Origin:Taiwan

Brand Name:Microsemi Corporation

Model Number:MRF581

Quick Detail: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz Applications: · Low Noise - 2.5 dB @ 500 MHZ · High Gain, Gain at Optimum Noise Figure = 15.5 dB @ ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF1035MB

Quick Detail: MRF1035MB - Motorola, Inc - MICROWAVE POWER TRANSISTORS Description: Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF5177

...RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Applications: Performance @400MHz,28Vdc-Power Output=30W(Min) Gain=6.0dB(Min) Isothermal Design...

Place of Origin:Taiwan

Brand Name:Motorola, Inc

Model Number:MRF136

Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ...

Place of Origin:PHILIPPINE

Brand Name:Motorola

Model Number:MHW5182

Quick Detail: MHW5182 - Motorola, Inc - 450 MHz CATV Amplifier Description: . . . designed specifically for 450 MHz CATV applications. Features ion–im -planted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. Applications...

Brand Name:Anterwell

Model Number:2SC1972

Place of Origin:original factory

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...

Place of Origin:Taiwan

Brand Name:SRNXP

The details of the products NPN RF Transistor 2SC3356 Band:SR;NXP 3 years warranty Free samples for testing DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and ...

Place of Origin:Guangxi

Brand Name:GSME

Model Number:2SC4901

High-Frequency Amplifier Transistor.(Typ.ft = 9 Ghz.) Designed for VHF,UHF low noise amplifier. - - Symbol MIN NOR MAX Unit Test Condition VCBO 15 - - V IC=1.0µA ICBO - - 0.1 µA VCB=8V IEBO - - 1.0 µA VEB=1V hFE 60 150 300 - VCE=5V,IC=20mA fT 7 9 - GHz VCE...

Place of Origin:Taiwan

The details of the products 2SC3325 RF Transistor Band: SR; NXP 3 years warranty Free samples for testing DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and ...

Brand Name:INFINEON

Model Number:PXAC241702FC-V1-R250

Place of Origin:CHINA

...RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RFP-LD10M Description ThePXAC241702FC is a 28 V LDMOS FET with an asym metrical design intended for use in multi-standard cellular power amplifier ap-plications in the 2300 to 2400 MHz frequency band. Features include dual-path design...

Place of Origin:China

Model Number:MHW7222

The RF Line The MHW7222 and MHW8222 are designed specifically for up to 860 MHz CATV systems as amplifiers in trunk and line extender applications. These Amplifiers feature ion-implanted, arsenic emitter transistors and an all gold Metallization system. ...