n channel mosfet transistor

Brand Name:IOR

Model Number:IRF640NSTRLPBF

Place of Origin:CN

...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with

Model Number:D2003UK

Place of Origin:Malaysia

Brand Name:KAIGENG

D2003UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2003UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:Original

Model Number:IPG20N06S4L14AATMA1

Place of Origin:Original

...Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor

Brand Name:NXP Semiconductors

Model Number:AFT05MS003NT1

...MOSFET Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel...

Place of Origin:US

Brand Name:Original

Model Number:AO3401A

Product Detail Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:BTS282Z E3230

Place of Origin:Malaysia

...Channel MOSFET 49V 80A Transistors FETs BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -40 °C to 175 °C. This N channel MOSFET

Place of Origin:MALAYSIA

Brand Name:FREESCALE

Model Number:ELM1314-30F

ELM1314-30F is a Single N-channel MOSFET . Part NO: ELM1314-30F Brand: FREESCALE Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:BTS282Z E3230

... parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -40 °C to 175 °C. This N

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMS1D2N03DSD

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as ...

Brand Name:CSD13381F4

Model Number:CSD13381F4

Place of Origin:China

CSD13381F4 DQ XFDFN-3 N-Channel 12V ESD Protection Field Effect MOS Transistor Attributes parameter value Product catalogue Field Effect Transistor (MOSFET) type - Drain-Source Voltage (Vdss) - Continuous drain current (Id) - Power (Pd) - On-resistance (...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:Ti

Model Number:FDMS86181

... 50% lower Qrr than other MOSFET suppliers Lowers switching noise/EMI MSL1 robust package design 100% UIL tested RoHS Compliant General Description This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that

Brand Name:Anterwell

Model Number:IRFB4229PBF

Place of Origin:original factory

PDP SWITCH IRFB4229PbF Features • Advanced Process Technology • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch ...

Brand Name:Canyi

Model Number:10N60

Place of Origin:Guangdong, China

...channel mosfet field effect transistors for switched mode power supplies Datasheet:CY-10N60F.pdf Field effect transistor features: Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V Low gate charge MOSFET simplifies gate drive design( typical 9.0 nC) Fast switching 100% avalanche tested to make sure quality before ship This 10N60 improved rate of change of voltage over time Mosfet General Description: The10N60H N Channel

Model Number:IRF Series

Place of Origin:china

Key Specifications/Special Features: Part number: IRF620 IRP530 ~ IRFP150 IRFP250 ~ IRF9520 IRF9530 ~ IRFD120 and etc. Brands: Samsung Motorola IR SGS-Thomson Harris Intesil Fairchild Hitachi Fuji Toshiba High-quality materials Excellent performance Ple...

Brand Name:Infineon Technologies

Model Number:BF999 E6327

Place of Origin:CHINA

BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications • Pb-free (RoHS compliant) package1) 2.Why choose us? ...

Place of Origin:CHINA

Brand Name:UMEAN

Model Number:mosfet transistor 500V N-Channel MOSFET TO-220F-3 FQPF5N50C